Semiconductor device

ABSTRACT

According to one embodiment, a semiconductor device includes a semiconductor circuit having an electrode on a first surface. A case part surrounds the semiconductor circuit. A matching part is provided including a signal terminal on an outside of the matching part and a lead on the inside of the matching part that is electrically connected to the signal terminal. The case part and matching part are configured to engage one another and be attached to one another when pressed together. The lead includes a contact portion that is in contact with the electrode when the matching part is attached to the case part, a first portion connecting between the signal terminal and the contact portion, and a spring portion between the first portion and the contact portion.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2022-040271, filed Mar. 15, 2022, theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor device.

BACKGROUND

A power module is known as a semiconductor device that realizes a highoutput. A power module can have multiple power semiconductors mounted inone package. A power module may be a 1-in-1, a 2-in-1, a 6-in-1, or thelike, in accordance with the number of power semiconductors in themodule. Power module can have a signal terminal connected to asemiconductor circuit that is attached to a case in which asemiconductor circuit including a power semiconductor is placed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram of a semiconductor device according to afirst embodiment.

FIG. 2 depicts a planar layout of a case provided in a semiconductordevice according to a first embodiment.

FIG. 3 depicts aspects of a semiconductor device according to the firstembodiment.

FIG. 4 is a plan view of a semiconductor device according to the firstembodiment.

FIG. 5 is a cross-sectional view taken along a V-V line of FIG. 4 .

FIG. 6 shows structures before and after assembly of a semiconductordevice according to a first embodiment.

FIG. 7 is a cross-sectional view of a semiconductor device according toa modification of the first embodiment.

FIG. 8 is a cross-sectional view of a semiconductor device according toa second embodiment.

FIG. 9 shows structures before and after assembly of a semiconductordevice according to a second embodiment.

FIG. 10 is a plan view of a part of a semiconductor device according toa third embodiment.

FIG. 11 shows structures before and after assembly of a semiconductordevice according to a third embodiment.

FIG. 12 shows structures before and after assembly of a semiconductordevice according to a modification of the third embodiment.

DETAILED DESCRIPTION

Embodiments provide a facilitation of semiconductor device assemblywhile reducing inductance of signal terminal wiring.

In general, according to one embodiment, a semiconductor device includesa semiconductor circuit having an electrode on a first surface. A casepart surrounds the semiconductor circuit. A matching part is providedincluding a signal terminal on an outside of the matching part and alead on the inside of the matching part that is electrically connectedto the signal terminal. The case part and matching part are configuredto engage one another and be attached to one another when pressedtogether. The lead includes a contact portion that is in contact withthe electrode when the matching part is attached to the case part, afirst portion connecting between the signal terminal and the contactportion, and a spring portion between the first portion and the contactportion.

Hereinafter, certain example embodiments will be described withreference to the drawings. Depicted dimensions, dimensional ratios,relative scales, and the like of elements, components, and aspects inthe drawings are not necessarily the same as those of an embodiment inactual implementation. The terms or phrases “upper side”, “lower side”,“left side”, and “right side” used in the description of the drawingsindicate an upper side, a lower side, a left side, and a right side onthe page of the drawing being referred to. In the present specification,identical reference symbols are allotted to components having identical,or substantially so, functions and configurations. In some instances,additional numbers or letters appended to a reference symbol as suffixor the like in order to differentiate between in description elements,components, or aspects sharing the same base reference symbol and thatare otherwise similar to each other in points other than those mentionedin relevant context.

1. First Embodiment

A semiconductor device 1 according to a first embodiment is a powermodule. The semiconductor device 1 can be applied to a railroad carpower conversion device, renewable energy generating systems, industrialequipment, or the like. The semiconductor device 1 can have aconfiguration such that wiring (a lead) having flexibility (springiness)is used for connecting a semiconductor circuit and a signal terminalwithin a case. In the present example of a first embodiment, thesemiconductor device 1 is a 2-in-1 power module.

1-1. Semiconductor Device 1 Circuit Configuration

FIG. 1 is a circuit diagram showing one example of a circuitconfiguration of the semiconductor device 1 according to the firstembodiment. As shown in FIG. 1 , the semiconductor device 1 includesterminals TP and TN, a terminal TOUT, terminals TGU and TGL, transistorsNMU and NML, inductances L1 and L2, diodes DU and DL, and terminalsTMVU, TMVL, TMCU, and TMCL.

The terminals TP and TN are input terminals of the semiconductor device1. The terminals TP and TN have positive polarity and negative polarity,respectively, in the circuit configuration of the semiconductor device1. The terminal TP may also be called a “positive terminal”. Theterminal TN may also be called a “negative terminal”.

The terminal TOUT is an output terminal of the semiconductor device 1.The terminal TOUT may also be called an “AC (alternating current)terminal” or “AC terminal”.

The terminals TGU and TGL are control terminals of the semiconductordevice 1. A control terminal corresponds to a signal terminal used incontrolling the driving of an element of a power semiconductor providedin the semiconductor device 1. The terminal TGU may also be called an“upper gate terminal”. The terminal TGL may also be called a “lower gateterminal”.

Each of the transistors NMU and NML is, for example, an n-type MOS(metal-oxide-semiconductor) transistor. The transistors NMU and NML areconnected in series between the terminals TP and TN. The transistor NMUhas a drain terminal connected to the terminal TP, a gate terminalconnected to the terminal TGU, and a source terminal connected to a nodeN1. The transistor NML has a drain terminal connected to a node N2, agate terminal connected to the terminal TGL, and a source terminalconnected to a node N3. The transistor NMU may also be called an “uppertransistor”. The transistor NML may also be called a “lower transistor”.

Each of the depicted inductances L1 and L2 is, for example, a parasiticinductance inherent in the circuit configuration of the semiconductordevice 1 rather than a discrete inductor element or the like, though forpurposes of the description the inductances L1 and L2 (and otherparasitic elements) are depicted as discrete elements. The inductance L1is connected between the transistors NMU and NML. Specifically, a firstend of the inductance L1 is connected to the node N1. A second end ofthe inductance L1 is connected to the node N2. The inductance L2 isconnected between the transistor NML and the terminal TN. Specifically,a first end of the inductance L2 is connected to the node N3. A secondend of the inductance L2 is connected to a node N4. The node N4 isconnected to the terminal TN.

The diode DU is, for example, a parasitic diode of the transistor NMU.The diode DL is, for example, a parasitic diode of the transistor NML.The diode DU is connected in parallel with the transistor NMU, and thediode DL is connected in parallel with the transistor NML, between theterminals TP and TN. Each of the diodes DU and DL functions as afreewheeling diode (FWD).

The terminals TMVU, TMVL, TMCU, and TMCL are monitoring terminals of thesemiconductor device 1. A monitoring terminal corresponds to a signalterminal used in monitoring electrical characteristics (for example,voltage or current) of the circuit configuration of the semiconductordevice 1.

Each of the terminals TMVU and TMVL is a transistor source potentialmonitoring terminal. The terminals TMVU and TMVL are connected to thenodes N1 and N3, respectively. That is, the terminal TMVU is used inmonitoring a source terminal voltage of the transistor NMU. The terminalTMVL is used in monitoring a source terminal voltage of the transistorNML. The terminal TMU may also be called an “upper source monitoring(sensing) terminal” or the like. The terminal TML may also be called a“lower source monitoring (sensing) terminal” or the like.

The terminals TMCU and TMCL are terminals that monitor current flowingthrough the semiconductor device 1 and are used in combination with theterminals TMVU and TMVL. The terminals TMCU and TMCL are connected tothe nodes N2 and N4, respectively. Current flowing through thetransistor NMU may be calculated by detecting the potential differenceoccurring across the inductance L1 (that is, a difference in potentialbetween the terminals TMVU and TMCU), and calculating backward from thedetected potential difference. Current flowing through the transistorNML may be calculated by detecting a potential difference occurringacross the inductance L2 (that is, a difference in potential between theterminals TMVL and TMCL), and calculating backward from the detectedpotential difference.

In the semiconductor device 1, each of the transistors NMU and NML maybe an IGBT (insulated-gate bipolar transistor). In practice, multipletransistors NMU may be connected in parallel between the terminal TP andthe node N1. Likewise, multiple transistors NML may be connected inparallel between the terminal TN and the node N3. The semiconductordevice 1 may include additional signal terminals other than theterminals TGU, TGL, TMVU, TMVL, TMCU, and TMCL. In some examples, one ormore of the terminals TMVU, TMVL, TMCU, and TMCL may be omitted from thesemiconductor device 1. There may be a multiple of each terminal type instill other examples.

1-2. Semiconductor Device 1 Structure

The semiconductor device 1 is a combination of a case 10 (see, e.g.,FIG. 2 ) and a part 20 (see, e.g., FIG. 3 ). The case 10 includes asemiconductor circuit such as a power semiconductor device circuit orincludes a power semiconductor element or the like. The case 10 may alsobe referred to as a lower case part 10, a main case part 10, a lowerpart 10, a lower case 10, a circuit case 10, a circuit case part 10, orthe like. The part 20 includes at least one control terminal and wiring(a lead). The part 20 may also be referred to as a matching part 20, amating part 20, a mated part 20, an upper case part 20, a top part 20, alead holder part 20, a terminal holder part 20, or the like. In thefollowing description, a signal terminal provided corresponding to theupper transistor (NMU) is called a “terminal TMU”, and a signal terminalprovided corresponding to the lower transistor (NML) is called a“terminal TML”. The description of the structure of the terminal TMU maybe applied to the terminals TMVU and TMCU as well. The description ofthe structure of the terminal TML may be applied to the terminals TMVLand TMCL as well. In the present example, the semiconductor device 1includes just one set of the terminals TMU and TML.

1-2-1. Case 10 Planar Layout

FIG. 2 is a plan view showing one example of a planar layout of the case10 provided in the semiconductor device 1 according to the firstembodiment. As shown in FIG. 2 , the case 10 includes an insulatingmember 11, insulating substrates 12 a and 12 b, conductors 13 a and 13b, conductors 14 a and 14 b, conductors 15 a and 15 b, conductors 16 aand 16 b, conductors 17 a and 17 b, and conductors 18 a, 18 b, 18 c, and18 d. Furthermore, the case 10 also includes a base substrate SUB butthis is not apparent in FIG. 2 (but see, e.g., FIG. 5 ).

The base substrate SUB is a supporting body for the semiconductor device1. The base substrate SUB has a plate form. The base substrate SUBcorresponds to a lower portion of a receptacle of the semiconductordevice 1. The base substrate SUB has, for example, screw holes in fourcorners. The base substrate SUB can be fixed to external equipment orthe like via the screw holes. The base substrate SUB comprises, forexample, copper (Cu) or a ceramic.

The insulating member 11 is provided on the base substrate SUB. Theinsulating member 11 is an insulating body having a square tube form (anopen-ended box form) in this example. The insulating member 11corresponds to side portions of the receptacle of the semiconductordevice 1 and is fixed to the base substrate SUB. The insulating member11 is, for example, a resin part, such as PPS (polyphenylene sulfide).In the present specification, a plane parallel to a contact face betweenthe base substrate SUB and the insulating member 11 is defined as an XYplane for purposes of description. A longitudinal direction and alateral direction of the base substrate SUB are defined as an Xdirection and a Y direction respectively in the XY plane. A Z directioncorresponds to a orthogonal direction with respect to the XY plane andmay also be referred to as a vertical direction.

The insulating member 11 has receiving portions 111 (111 a, 111 b) andreceiving portions 112 (112 a, and 112 b). Each of the receivingportions 111 and 112 is, for example, recessed portion formed in aninner wall of the insulating member 11. Each of the receiving portions111 and 112 is used in fixing the case 10 and the part 20, and it issufficient that each of the receiving portions 111 and 112 has a formsuch that a claw portion provided in the part 20 can latch thereon. Thereceiving portions 111 a and 111 b are arranged in the X direction onone side of the inner wall of the insulating member 11. The receivingportions 112 a and 112 b are arranged in the X direction on another sideof the inner wall of the insulating member 11. The receiving portions111 a and 112 a are disposed on a left side and oppose each other in theY direction. The receiving portions 111 b and 112 b are disposed on aright side and oppose each other in the Y direction.

The insulating substrates 12 (12 a and 12 b) are insulating substratesthat support the circuit configuration of the semiconductor device 1.Each insulating substrate 12 is provided on the base substrate SUB andis surrounded by the insulating member 11 when seen in plan view. Thatis, the insulating member 11 encloses side portions of the insulatingsubstrate 12. The insulating substrates 12 a and 12 b are arranged inthe X direction, and are disposed one each on the left side and theright side. The insulating substrate 12 comprises, for example, siliconnitride (SiN).

The conductors 13 a, 14 a, 15 a, 16 a, and 17 a are provided on theinsulating substrate 12 a. The conductors 13 a, 14 a, 15 a, 16 a, and 17a are separated from each other. Also, each of the conductors 13 a, 14a, 15 a, 16 a, and 17 a has a portion that extends in the X direction.The portions of the conductors 13 a, 14 a, 15 a, 16 a, and 17 a thatextend in the X direction are arranged in this order along the Ydirection. Also, the conductor 15 a also has a portion that extends inthe Y direction. The portion of the conductor 15 a that extends in the Ydirection has a portion provided, for example, to the left side of theconductors 13 a, 14 a, 16 a, and 17 a.

The conductors 13 b, 14 b, 15 b, 16 b, and 17 b are provided on theinsulating substrate 12 b. The conductors 13 b, 14 b, 15 b, 16 b, and 17b are separated from each other. Also, each of the conductors 13 b, 14b, 15 b, 16 b, and 17 b has a portion that extends in the X direction.The portions of the conductors 13 b, 14 b, 15 b, 16 b, and 17 b thatextend in the X direction are arranged in this order along the Ydirection. Also, the conductor 13 b has a portion that extends in the Ydirection. The portion of the conductor 13 b that extends in the Ydirection has a portion provided, for example, to the right side of theconductor 14 b. The conductor 17 b also has a portion that extends inthe Y direction. The portion of the conductor 17 b that extends in the Ydirection has a portion provided, for example, to the right side of theconductor 16 b.

Each of the conductors 18 a, 18 b, 18 c, and 18 d has a terminal portionand a lead, and is, for example, insert-molded in the insulating member11. The terminal portion of each of the conductors 18 a, 18 b, 18 c, and18 d has a portion that is exposed when seen from above the insulatingmember 11. Each of the conductors 18 a and 18 b corresponds to theterminal TOUT. The conductors 18 a and 18 b are arranged in the Ydirection on the left side of the insulating member 11. The lead of eachof the conductors 18 a and 18 b is connected to the conductor 15 a. Theconductors 18 c and 18 d correspond to the terminals TP and TN,respectively. The conductors 18 c and 18 d are arranged in the Ydirection on the right side of the insulating member 11. The lead of theconductor 18 c is connected to the conductor 13 b. The lead of theconductor 18 d is connected to the conductor 17 b.

Each of the transistors NMU and NML provided in the semiconductor device1 is, for example, a vertical transistor. In FIG. 2 , each of thetransistors NMU and NML is indicated by a quadrilateral region to whichno hatching is added. A bottom face (the base substrate SUB side) of therelevant region corresponds to the drain terminal of the transistor. Twodots arranged in the X direction within the relevant region correspondto a source terminal of the transistor. One dot disposed in a lowerportion of the relevant region corresponds to the gate terminal of thetransistor.

Multiple transistors NMU are arranged in the X direction on theconductor 13 a. Hereafter, the transistors NMU on the conductor 13 awill be called “transistors NMUa”. The drain terminal of each transistorNMUa is connected to the conductor 13 a. The gate terminal of eachtransistor NMUa is connected to the conductor 14 a. The source terminalof each transistor NMUa is connected to the conductor 15 a.

Multiple transistors NMU are arranged in the X direction on theconductor 13 b. Hereafter, the transistors NMU on the conductor 13 bwill be called “transistors NMUb”. The drain terminal of each transistorNMUb is connected to the conductor 13 b. The gate terminal of eachtransistor NMUb is connected to the conductor 14 b. The source terminalof each transistor NMUb is connected to the conductor 15 b.

Multiple transistors NML are arranged in the X direction on theconductor 15 a. Hereafter, the transistors NML on the conductor 15 awill be called “transistors NMLa”. The drain terminals of thetransistors NMLa are connected to the conductor 15 a. The gate terminalsof the transistors NMLa are connected to the conductor 16 a. The sourceterminals of the transistors NMLa are connected to the conductor 17 a.

Multiple transistors NML are arranged in the X direction on theconductor 15 b. Hereafter, the transistors NML on the conductor 15 bwill be called “transistors NMLb”. The drain terminals of thetransistors NMLb are connected to the conductor 15 b. The gate terminalsof the transistors NMLb are connected to the conductor 16 b. The sourceterminals of the transistors NMLb are connected to the conductor 17 b.

Furthermore, the drains of each of the transistors NMUa and NMUb areelectrically connected. The sources of each of the transistors NMUa andNMUb are electrically connected, and the drains of each of thetransistors NMLa and NMLb are electrically connected. Likewise, thesources of each of the transistors NMLa and NMLb are electricallyconnected. Specifically, the pairs of each of the conductors 13 a and 13b, the conductors 15 a and 15 b, and the conductors 17 a and 17 b arerespectively connected by, for example, wire bonding (bonding wires).

The conductors 13 a and 13 b may be called drain electrodes of thetransistors NMUa and NMUb, respectively. The conductors 14 a and 14 bmay be called gate electrodes of the transistors NMUa and NMUb,respectively. The conductors 15 a and 15 b may be called sourceelectrodes of the transistors NMUa and NMUb, respectively, or drainelectrodes of the transistors NMLa and NMLb, respectively. Theconductors 16 a and 16 b may be called gate electrodes of thetransistors NMLa and NMLb, respectively. The conductors 17 a and 17 bmay be called source electrodes of the transistors NMLa and NMLb,respectively.

1-2-2. Part 20 Planar Layout

FIG. 3 is a plan view showing one example of a planar layout of the part20 provided in the semiconductor device 1 according to the firstembodiment. Portions of the case 10 disposed coinciding with the part 20after assembly of the semiconductor device 1 are shown using two-dotchain lines in FIG. 3 . As shown in FIG. 3 , the part 20 includes, forexample, an insulating member 21 and conductors 22, 23, 24, and 25.

The insulating member 21 is, for example, an insulating body having asquare tube form. A width in the X direction of the insulating member 21is, for example, less than a width in the X direction of the insulatingmember 11 of case 10. A width in the Y direction of the insulatingmember 21 is, for example, the same as a width in the Y direction of theinsulating member 11 of case 10. The insulating member 21 is, forexample, a resin part, such as polyphenylene sulfide.

Also, the insulating member 21 has claw portions 211 (211 a, 211 b) andclaw portions 212 (212 a, 212 b). Each of the claw portions 211 and 212has a claw form structure for attaching the part 20 to the case 10.Specifically, each of the claw portions 211 a, 211 b, 212 a, and 212 bhas a portion that protrudes farther to an inner side than the innerwall of the insulating member 11 of the case 10. Further, these portionshave a form that is bent to an outer side after extending to the case 10side in the Z direction. Each of the claw portions 211 and 212 is usedin fixing the case 10 and the part 20, and it is sufficient that theclaw portions 211 and 212 are of forms that can catch on receivingportions provided in the case 10. The claw portions 211 a, 211 b, 212 a,and 212 b are positioned in such a way as to be opposite thecorresponding receiving portions 111 a, 111 b, 112 a, and 112 b of thecase 10.

Each of the conductors 22, 23, 24, and 25 is insert molded in theinsulating member 21. The conductors 22, 23, 24, and 25 are separatedfrom each other. The conductors 22, 23, 24, and 25 correspond to theterminals TGU, TMU, TGL, and TML, respectively. That is, the insulatingmember 21 holds multiple signal terminals. A terminal portion of each ofthe conductors 22, 23, 24, and 25 corresponds to a portion exposed whenseen from above the insulating member 21. Also, each of the conductors22, 23, 24, and 25 has a lead portion LP and a contact portion CP. Eachlead portion LP corresponds to wiring (a lead or a wiring lead) forconnecting a corresponding terminal and an electrode (a conductor). Eachcontact portion CP corresponds to a portion that comes into contact withan electrode (a conductor).

The lead portion LP of the conductor 22 has two branch portions thatrespectively coincide with the conductors 14 a and 14 b, and a contactportion CP is provided for each branch portion of the conductor 22. Thelead portion LP of the conductor 23 has a portion that coincides withthe conductor 15 a, and the contact portion CP of the conductor 23 isprovided in such a way as to coincide with the portion. The lead portionLP of the conductor 24 has two branch portions that respectivelycoincide with the conductors 16 a and 16 b, and a contact portion CP isprovided for each branch portion of the conductor 24. The lead portionLP of the conductor 25 has a portion that coincides with the conductor17 a, and the contact portion CP of the conductor 25 is provided in sucha way as to coincide with the portion. The terminal portion and the leadportion LP of a signal terminal may be formed as integrated portions, ormay be formed from divided (separate) portions. It is sufficient that aconductor corresponding to a signal terminal has a terminal portion anda lead portion LP that are electrically connected in some manner.

1-2-3. Semiconductor Device 1 Planar Layout

FIG. 4 is a plan view showing one example of a planar layout of thesemiconductor device 1 according to the first embodiment. FIG. 4corresponds to a planar layout after the part 20 is attached to the case10; however, for depictional clarity, various wiring such as wirebondings in the case 10 are omitted from the drawing. As shown in FIG. 4, the semiconductor device 1 includes, for example, engaged portionsEPUa, EPUb, EPLa, and EPLb.

A receiving portion of the case 10 and a claw portion of the part 20 areengaged in each of the engaged portions EPUa, EPUb, EPLa, and EPLb.Specifically, the receiving portion 111 a and the claw portion 211 a areengaged in the engaged portion EPUa. The receiving portion 111 b and theclaw portion 211 b are engaged in the engaged portion EPUb. Thereceiving portion 112 a and the claw portion 212 a are engaged in theengaged portion EPLa. The receiving portion 112 b and the claw portion212 b are engaged in the engaged portion EPLb. Because of this, the part20 can be said to be attached to the case 10, or the part 20 can be saidto be fixed to the case 10.

When the part 20 is attached to the case 10, the two contact portions CPof the conductor 22 (the terminal TGU) are pressed against theconductors 14 a and 14 b, respectively. In the same way, the contactportion CP of the conductor 23 (the terminal TMU) is pressed against theconductor 15 a. In the same way, the two contact portions CP of theconductor 24 (the terminal TGL) are pressed against the conductors 16 aand 16 b, respectively. In the same way, the contact portion CP of theconductor 25 (the terminal TML) is pressed against the conductor 17 b.Further, in order to provide a pressure (or force) (hereafter called“pressure contact force”) to press the contact portion CP and aconductor together, the semiconductor device 1 utilizes wiring havingelasticity (springiness).

Although not specifically depicted in FIG. 4 , a cover or lid may beprovided on the part 20. The cover is, for example, fixed to the part20, and seals a space in which the circuit of the semiconductor device 1is provided. The cover can be an insulating body formed of polyphenylenesulfide or the like.

1-2-4. Semiconductor Device 1 Side View

FIG. 5 shows one example of a cross-sectional structure of thesemiconductor device 1 according to the first embodiment. FIG. 6corresponding in position to a V-V line of FIG. 4 . FIG. 5 shows aregion corresponding to the conductor 22 (the terminal TGU) extracted asone example of a structure of a signal terminal of the first embodiment.As shown in FIG. 5 , the part 20 has been mounted on the case 10. Eachof the insulating member 11 and the insulating substrate 12 is providedon the base substrate SUB. Each of the conductors 13 and 14 is providedon the insulating substrate 12. A height of the insulating member 11 isgreater than a total height of the insulating substrate 12 and theconductor 13. The insulating member 21 of the part 20 is provided on theinsulating member 11 of the case 10.

The conductor 22 has the terminal portion (the terminal TGU), the leadportion LP, the contact portion CP, and a spring portion SP. Theterminal TGU, the lead portion LP, the spring portion SP, and thecontact portion CP are provided continuously in this order along thelength of the conductor 22. As it is sufficient that the terminal TGUand the lead portion LP are electrically connected, the terminal TGU andthe lead portion LP may be formed separately in other examples. Aportion wherein the lead portion LP, the spring portion SP, and thecontact portion CP are provided continuously in the conductor 22 may becalled “signal terminal wiring (leads)”. The lead portion LP may becalled a “wiring bridge portion”.

The terminal TGU and the lead portion LP each have a portion that isinsert molded in the insulating member 21. The terminal TGU has aportion that extends in the Z direction and, for example, protrudesupward from the insulating member 21. The lead portion LP has aplate-form portion that extends in the Y direction. The contact portionCP is provided in a plate form such that face-to-face contact can bemade with the conductor 14. The contact portion CP has a portion thatcoincides with an end portion of the lead portion LP in the Z direction.The end portion of the lead portion LP and the contact portion CP areconnected via a plate-form portion that extends in the Z direction.

The spring portion SP is provided between the end portion of the leadportion LP and the contact portion CP. The spring portion SP may also becalled a bent portion or a flex portion. In the spring portion SP, theconductor 22 is bent in such a way as to protrude in a directionparallel to the XY plane. Specifically, the conductor 22 in the springportion SP has a form that is bent along a circumference of asemi-ellipsoid, for example. The spring portion SP has elasticity(springiness). In the semiconductor device 1, the contact portion CP ispressed against the conductor 14 by force (spring force) generated bythe elasticity of the spring portion SP.

In the above description, the conductor 22 (the terminal TGU) isdescribed as one example of a signal terminal structure. The othersignal terminals also have the same structure as the terminal TGU. Thelead portion LP is preferably configured in such a way that distortionwhen the part 20 is attached to the case 10 can be restricted other thanthat of the spring portion SP. In some examples, the lead portion LP mayhave a portion that is distorted (bent) in the Z direction. The form ofthe spring portion SP not being limited to a bent plate form, it issufficient that the spring portion SP has springiness or the likesufficient to provide a pressure contact force.

1-3. Semiconductor Device 1 Side Views Before and After Assembly

FIG. 6 shows cross-sectional structures before and after assembly of thesemiconductor device 1 according to the first embodiment. The topportion of FIG. 6 shows a structure before assembly, and the bottomportion of FIG. 6 shows a structure after assembly of the semiconductordevice 1. FIG. 6 show a structure of the semiconductor device 1schematically in order to represent an aspect wherein a receivingportion of the case 10 and a claw portion of the part 20 are engaged,and also an aspect shown in FIG. 3 wherein the terminals TGU and TGLdisposed on the upper side and the lower side, respectively, of the part20 are connected to electrodes.

Hereafter, a portion of the insulating member 11 on the upper side ofthe case 10 shown in FIG. 2 will be called an “insulating member 11U”,and a portion on the lower side of the case 10 shown in FIG. 2 will becalled an “insulating member 11L”. In the same way, a portion of theinsulating member 21 of the part 20 disposed on the upper side of thepart 20 shown in FIG. 3 will be called an “insulating member 21U”, and aportion disposed on the lower side of the part 20 shown in FIG. 3 willbe called an “insulating member 21L”.

As shown in FIG. 6 (upper portion), the receiving portion 111 providedin the insulating member 11U and the claw portion 211 provided in theinsulating member 21U are disposed opposing each other in the Zdirection. The receiving portion 112 provided in the insulating member11L and the claw portion 212 provided in the insulating member 21L aredisposed opposing each other in the Z direction. The conductor 22 (theterminal TGU) is insert molded in the insulating member 21U. The springportion SP of this conductor 22 is depicted in a state wherein no weight(force) is being applied. In the same way, the spring portion SP of theconductor 24 (the terminal TGL), insert molded in the insulating member21L, is depicted in a state wherein no weight (force) is being applied.The part 20 is attached to the case 10 when pressed together towards thebase substrate SUB side.

Upon the part 20 being attached to the case 10, the receiving portion111 and the claw portion 211 engage, whereby the engaged portion EPU isformed, as shown in FIG. 6 (lower portion). In the same way, thereceiving portion 112 and the claw portion 212 engage, whereby theengaged portion EPL is formed. Because of this, the part 20 is fixed tothe case 10. Also, when the contact portion CP of the conductor 22 comesinto contact with the conductor 14 in the process of the part 20 beingattached to the case 10, the spring portion SP of the conductor 22 isdistorted due to pressure in the Z direction being applied via the leadportion LP of the conductor 22. Furthermore, upon the part 20 beingattached to the case 10, a pressure contact force is generated by theelasticity of the spring portion SP and applied to the contact portionCP. In other words, the contact portion CP of the conductor 22 is nowbeing pressed onto the conductor 14 (electrode). As a result of this, abottom face of the contact portion CP of the conductor 22 pressesagainst a top face of the conductor 14, thereby being electricallyconnected to the conductor 14. In the same way, a bottom face of thecontact portion CP of the conductor 24 presses against a top face of theconductor 16, thereby being electrically connected to the conductor 16.

1-4. Advantages of First Embodiment

Wire bonding, ultrasonic bonding, solder bonding, and the like, areknown methods of connecting a signal terminal and a gate terminalprovided in a semiconductor circuit. However, when wire bonding is used,gate wiring increases in length, and there is concern that wiringinductance will increase. Also, the regions provided to permit the wirebonding may become dead (unused) space after fabrication. Ultrasonicbonding is such that when a ceramic substrate is used as a basesubstrate, there is concern that the ceramic substrate will crack. Also,ultrasonic bonding generally cannot be employed when a resin substrateis used as a base substrate. With solder bonding, there is concern thata case material or the like cannot withstand a usual reflow temperaturein associated manufacturing processes.

Therefore, the semiconductor device 1 according to the first embodimentincludes a part 20 in which a signal terminal (or a plurality of signalterminals) is insert molded. Further, the semiconductor device 1 is suchthat upon the part 20 being fitted into the case 10, wiring (a lead) ofthe signal terminal is pressed against an internal circuit by pressurecontact force of the spring portion SP, thereby being sufficiently andstably electrically connected to the internal circuit. That is,additional processes such as wire bonding, ultrasonic bonding, or solderbonding for connecting a signal terminal and an internal circuit areunneeded in the manufacturing process of the semiconductor device 1, andoverall number of processes needed for assembling the case 10 and thepart 20 may be reduced.

Because of this, the semiconductor device 1 is such that a difficulty ofassembly is reduced, and a manufacturing cost may be lowered. Also, thesemiconductor device 1 is such that there is no need to leave additionalspace for wire bonding processes or the like for connecting a signalterminal and an internal circuit, thus signal terminal wiring may bedesigned to be more compact. Because the signal terminal wiring may bemore compact, parasitic inductance or the like may be reduced in design.Consequently, the semiconductor device 1 according to the firstembodiment is such that an area available for main or other wiring isenlarged owing to signal terminal wiring being compact, and assembly ofthe semiconductor device 1 can be facilitated while reducing signalterminal and other wiring inductance and wiring resistance.

The semiconductor device 1 is such that pressure bonding is utilizedbetween a signal terminal and an internal circuit, because of whichfixing may be carried out substantially stress-free with respect to thebase substrate SUB and the like. As a result of this, the semiconductordevice 1 is such that reliability of a connection of a signal terminaland an internal circuit can be increased.

A power module can be such that an external terminal type, number, andposition is defined by a standard. This means that when a fixed,independent standard is to be meet versatility with respect to signalterminal design can be lost. However, the semiconductor device 1according to the first embodiment is such that a signal terminal and anelectrode are electrically connected using a simple wiring structure, assuch many internal designs and variations can be possible that stillultimately accord with the standard to be met. Consequently, thesemiconductor device 1 according to the first embodiment is such that adesign costs and the like of a system in which a power module is usedcan be minimized.

1-5. First Embodiment Modification

Wiring thicknesses of signal terminals as described in the firstembodiment need not be necessarily uniform.

FIG. 7 is side view showing one example of a cross-sectional structureof a semiconductor device 1 a according to a modification of the firstembodiment. As shown in FIG. 7 , the semiconductor device 1 a includesthe case 10 and a part 20 a. The part 20 a has a structure wherein theconductor 22 (the terminal TGU) in the part 20 of the first embodimentis replaced by a conductor 22 a.

The conductor 22 a has a terminal portion (the terminal TGU), a leadportion LPa, the contact portion CP, and the spring portion SP. Theconductor 22 a in the lead portion LPa is thicker than other wiringportions (for example, the spring portion SP and the contact portionCP). In other words, the thickness of the conductor 22 a (the signalterminal wiring) is such that the lead portion LPa is thicker than thespring portion SP. Because of this, the lead portion LPa has higherrigidity than the lead portion LP of the first embodiment. As structuresof signal terminals other than the terminal TGU in the modification ofthe first embodiment are similar to that of the conductor 22 a,additional description will be omitted. The rest of the configurationsof the semiconductor device 1 a according to the modification of thefirst embodiment can be the same as in the first embodiment.

Distortion of the lead portion LP may affect the contact between thecontact portion CP and the electrode. That is, distortion of a leadportion LP may be a cause of variation in a contact state of the contactportion CP. In view of this, the semiconductor device 1 a according tothe modification of the first embodiment is such that distortion of thelead portion LP when the part 20 a is attached to the case 10 can berestricted further than in the first embodiment. Consequently, thesemiconductor device 1 a is such that variation in characteristics ofthe power module resulting from the contact state of the contact portionCP can be further restricted.

Second Embodiment

A semiconductor device 1 b according to a second embodiment has aconfiguration wherein the spring portion SP has a structure differingfrom that of the semiconductor device 1 according to the firstembodiment. Hereafter, points in the second embodiment that differ fromthe first embodiment will be primarily described.

2-1. Semiconductor Device 1 b Cross-Sectional Structure

FIG. 8 is a side view showing one example of a cross-sectional structureof the semiconductor device 1 b according to the second embodiment. Asshown in FIG. 8 , the semiconductor device 1 b includes the case 10 anda part 20 b. The part 20 b has a configuration wherein the conductor 22(the terminal TGU) in the part 20 of the first embodiment is replaced bya conductor 22 b.

The conductor 22 b has the terminal portion (the terminal TGU), the leadportion LP, the contact portion CP, and a spring portion SPa. The springportion SPa is provided between an end portion of the lead portion LPand the contact portion CP. The conductor 22 b has a loop form in thespring portion SPa. The spring portion SPa has elasticity (springiness).In the semiconductor device 1 b, the contact portion CP is pressedagainst the conductor 14 by pressure generated by the elasticity of thespring portion SPa. As structures of signal terminals other than theterminal TGU in the second embodiment are similar to that of theconductor 22 b, additional description will be omitted. The rest of theconfigurations of the semiconductor device 1 b according to the secondembodiment can be the same as in the first embodiment.

2-2. Semiconductor Device 1 b Side Views Before and After Assembly

FIG. 9 show cross-sectional structures before and after assembly of thesemiconductor device 1 b according to the second embodiment. Also, FIG.9 shows a structure of the semiconductor device 1 b schematically inorder to represent an aspect wherein a receiving portion of the case 10and a claw portion of the part 20 b are engaged, and an aspect whereinthe terminals TGU and TGL of the part 20 b are connected to electrodes.

As shown in FIG. 9 (upper portion), the spring portion SPa of theconductor 22 b is depicted in a state wherein no weight (force) is beingapplied. In the same way, the spring portion SPa of a conductor 24 b isdepicted in a state wherein no weight (force) is being applied.

Upon the part 20 b being attached to the case 10, the engaged portionsEPU and EPL are formed, whereby the part 20 b is fixed to the case 10,as shown in FIG. 9 (bottom portion). Upon the contact portion CP of theconductor 22 b coming into contact with the conductor 14, the springportion SPa of the conductor 22 b is distorted due to pressure in the Zdirection being applied by the lead portion LP of the conductor 22 b.Furthermore, upon the part 20 b being attached to the case 10, pressurecontact force generated by the elasticity of the spring portion SPa ofthe conductor 22 b is applied to the contact portion CP of the conductor22 b. As a result of this, the bottom face of the contact portion CP ofthe conductor 22 b is pressed approximately evenly against the top faceof the conductor 14, thereby being electrically connected to theconductor 14. In the same way, the bottom face of the contact portion CPof the conductor 24 is pressed approximately evenly against the top faceof the conductor 16, thereby being electrically connected to theconductor 16.

2-3. Advantages of Second Embodiment

The semiconductor device 1 b according to the second embodiment is suchthat the spring portion SPa provided in a signal terminal lead has aloop form. Because of this, pressure applied to the contact portion CPwhen the case 10 and the part 20 b are assembled may be more even thanin the first embodiment owing to the loop form. Consequently, thesemiconductor device 1 b has same advantages as in the first, butvariation in characteristics of the power module resulting from thecontact state of the contact portion CP can be additionally restricted.

Third Embodiment

A semiconductor device 1 c according to a third embodiment includes apart 20 c which also functions as a cover of the case 10.

3-1. Part 20 c Planar Layout

FIG. 10 is a plan view showing one example of a planar layout of thepart 20 c provided in the semiconductor device 1 c according to thethird embodiment. Portions provided in an interior or on a bottomportion of the part 20 c are indicated by broken lines in FIG. 10 . Asshown in FIG. 10 , the part 20 c includes an insulating member 21 a andthe conductors 22, 23, 24, and 25.

The insulating member 21 a is, for example, a plate-form insulatingbody. In the same way as the insulating member 21, the insulating member21 a has the claw portions 211 a, 211 b, 212 a, and 212 b. Each of theclaw portions 211 a, 211 b, 212 a, and 212 b of the insulating member 21a is used in fixing the case 10 and the part 20 c, and is provided in aform that can catch on a receiving portion provided in the case 10.Further, the claw portions 211 a, 211 b, 212 a, and 212 b of the part 20c are provided to oppose the receiving portions 111 a, 111 b, 112 a, and112 b of the case 10.

A terminal portion of each of the conductors 22, 23, 24, and 25 of thepart 20 c corresponds to a portion exposed when seen from above theinsulating member 21 a. Each of the conductors 22, 23, 24, and 25 of thepart 20 c is insert molded in the insulating member 21 a. The leadportion LP of each of the conductors 22, 23, 24, and 25 of the part 20 cis provided in, for example, a center of the insulating member 21 a. Therest of the configurations of the semiconductor device 1 c according tothe third embodiment are the same as in the first embodiment.

3-2. Semiconductor Device 1 c Side Views Before and After Assembly

FIG. 11 shows cross-sectional structures before and after assembly ofthe semiconductor device 1 c according to the third embodiment. FIG. 11shows a structure of the semiconductor device 1 c schematically in orderto represent an aspect wherein a receiving portion of the case 10 and aclaw portion of the part 20 c are engaged, and an aspect wherein theterminals TGU and TGL of the part 20 c are connected to electrodes.

As shown in FIG. 11 (upper portion), the spring portion SP of theconductor 22 (the terminal TGU) is depicted in a state wherein no weight(force) is being applied. In the same way, the spring portion SP of theconductor 24 (the terminal TGL) is depicted in a state wherein no weight(force) is being applied.

Upon the part 20 c being attached to the case 10, the engaged portionsEPU and EPL are formed, whereby the part 20 c is fixed to the case 10,as shown in FIG. 11 (bottom portion). Also, upon the part 20 c beingattached to the case 10, pressure contact force generated by theelasticity of the spring portion SP of the conductor 22 is applied tothe contact portion CP of the conductor 22. As a result of this, thebottom face of the contact portion CP of the conductor 22 is pressedagainst the top face of the conductor 14, thereby being electricallyconnected to the conductor 14. In the same way, the bottom face of thecontact portion CP of the conductor 24 is pressed against the top faceof the conductor 16, thereby being electrically connected to theconductor 16.

3-3. Advantages of Third Embodiment

The semiconductor device 1 c according to the third embodiment is suchthat the insulating member 21 a holding signal terminals has aconfiguration that is integrated with a cover of the case 10. When thecase 10 and the part 20 c are assembled, a semiconductor circuit isdisposed in the space enclosed by the case 10 and the insulating member21 a. That is, the insulating member 21 a is also used as a cover of thesemiconductor device 1 c. As a result of this, the semiconductor device1 c according to the third embodiment is such that the total number ofseparate parts is reduced, and the number of assembly man hours can bereduced. Consequently, the same advantages as in the first embodimentcan be obtained, but a power module manufacturing cost can be furtherreduced.

3-4. Third Embodiment Modification

In the semiconductor device 1 c according to the third embodiment, areceiving portion of the case 10 may be replaced by a claw portion, anda claw portion of the part 20 c replaced by a receiving portion. Thatis, a claw portion that fixes the part 20 c may be formed on the case 10side rather than vice versa.

FIG. 12 shows cross-sectional structures before and after assembly of asemiconductor device 1 d according to a modification of the thirdembodiment. Also, FIG. 12 shows a structure of the semiconductor device1 d schematically in order to represent an aspect wherein a claw portionof a case 10 a and a receiving portion of a part 20 d are engaged, andan aspect wherein the terminals TGU and TGL of the part 20 d areconnected to electrodes.

As shown in FIG. 12 , the case 10 a has a configuration wherein theinsulating members 11U and 11L are replaced by insulating members 11 aUand 11 aL in the case 10 of the first embodiment. The insulating members11 aU and 11 aL have claw portions 113 and 114, respectively. The part20 d has a configuration wherein the insulating member 21 a is replacedby an insulating member 21 b in the part 20 c of the third embodiment.The insulating member 21 b has a receiving portion 213 corresponding toa claw portion 113, and a receiving portion 214 corresponding to a clawportion 114.

As shown in FIG. 12 (upper portion), the claw portion 113 provided inthe insulating member 11 aU and the receiving portion 213 provided inthe insulating member 21 b are disposed opposing in the Z direction. Theclaw portion 114 provided in the insulating member 11 aL and thereceiving portion 214 provided in the insulating member 21 b aredisposed opposing in the Z direction. The part 20 d is attached to thecase 10 a when pressed to the base substrate SUB side.

Upon the part 20 d being attached to the case 10 a, the engaged portionsEPU and EPL are formed, in substantially the same way as in the firstembodiment, whereby the part 20 d is fixed to the case 10 a, as shown inFIG. 12 (bottom portion). Also, by the part 20 d being attached to thecase 10 a, the bottom face of the contact portion CP of the conductor 22is pressed against the top face of the conductor 14, thereby beingelectrically connected to the conductor 14. In the same way, the bottomface of the contact portion CP of the conductor 24 is pressed againstthe top face of the conductor 16, thereby being electrically connectedto the conductor 16.

The semiconductor device 1 d according to this modification of the thirdembodiment is such that the same advantages as in the third embodimentcan be obtained.

4. Other

In each embodiment, a description is given with a case wherein thesemiconductor device 1 is a 2-in-1 power module as an example, but thedisclosure is not limited to this. The configuration of each embodimentmay also be applied to another power module type, such as a 1-in-1 or a6-in-1. In each embodiment, a description is given with a case whereinsignal terminal wiring is insert molded in the insulating member 21 (orthe like), but this is not limiting. Signal terminal wiring may also be“outsert” molded in the insulating member 21. That is, wiring portionsmay run along a surface of the insulating member 21 (or the like) ratherthan within the insulating member 21 or the like.

The various embodiments may be combined as appropriate. For example, thespring portion SPa described in the second embodiment may be combinedwith either of the first and third embodiments (or modificationsthereof). The structure of each of the insulating members 11 a and 21 bdescribed in the modification of the third embodiment may be combinedwith either of the first and second embodiments. The semiconductordevice 1 may include multiple terminals TMU and/or multiple terminalsTML. The numbers of terminals TMU and TML may differ from one another.The number of signal terminals provided in the semiconductor device 1may be changed as appropriate in accordance with the design of thesemiconductor device 1 and/or intended final uses.

In the present specification, the term “connection” or “connected” mayrefer to being electrically connected, but such usage does not excludeanother element being interposed between “connected” components orwithin the “connection” path. In a case of “electrically connected”,even an insulating material may be interposed between componentsreferred to being “electrically connected” provided that an operationcan be carried out in substantially the same way as directlyelectrically connected components. A “claw form structure” and a “clawportion” may change elastically (deform) when the part 20 is attached orbeing attached to the case 10.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the disclosure. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of thedisclosure. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the disclosure.

What is claimed is:
 1. A semiconductor device, comprising: asemiconductor circuit having an electrode on a first surface; a casepart surrounding the semiconductor circuit; and a matching partincluding a signal terminal on an outside of the matching part and alead on the inside of the matching part that is electrically connectedto the signal terminal, wherein the case part and matching part areconfigured to engage one another and be attached to one another whenpressed together, and the lead includes a contact portion that is incontact with the electrode when the matching part is attached to thecase part, a first portion connecting between the signal terminal andthe contact portion, and a spring portion between the first portion andthe contact portion.
 2. The semiconductor device according to claim 1,wherein the contact portion is pressed against the electrode by apressure contact force generated by compression of the spring portionwhen the matching part is attached to the case part.
 3. Thesemiconductor device according to claim 1, wherein case part is anopen-ended rectangular box shape.
 4. The semiconductor device accordingto claim 1, further comprising: a base substrate closing a lower openend of the case part, wherein the semiconductor circuit is on the basesubstrate.
 5. The semiconductor device according to claim 1, wherein thecase part has a sidewall that extends in a direction orthogonal to thefirst surface.
 6. The semiconductor device according to claim 5, whereinthe sidewall includes a recess portion positioned to engage a clawportion of the matching part.
 7. The semiconductor device according toclaim 5, wherein the sidewall includes a claw portion configured toengage an end portion of the matching part.
 8. The semiconductor deviceaccording to claim 7, wherein the matching part includes a cover portionthat covers an upper open end of the case part when the matching part isattached to the case part.
 9. The semiconductor device according toclaim 1, wherein the matching part includes a cover portion that coversan upper open end of the case part when the matching part is attached tothe case part.
 10. The semiconductor device according to claim 1,wherein the spring portion comprises a bent portion that extends in adirection parallel to the first portion.
 11. The semiconductor deviceaccording to claim 1, wherein the spring portion comprises a loopportion.
 12. The semiconductor device according to claim 1, wherein aportion of the lead other than the spring portion is thicker than springportion.
 13. The semiconductor device according to claim 1, wherein thesemiconductor circuit includes a transistor, and the lead iselectrically connected to a gate electrode of the transistor via thecontact portion.
 14. The semiconductor device according to claim 1,wherein the semiconductor circuit includes a power semiconductorelement.
 15. A power module, comprising: a base substrate; asemiconductor circuit on the base substrate; an electrode for thesemiconductor circuit on the base substrate; an insulating case part onthe base substrate surrounding the semiconductor circuit and theelectrode in a plane parallel to a surface of the base substrate; and amatching part including a signal terminal on an outside of the matchingpart and a lead on the inside of the matching part that is electricallyconnected to the signal terminal, wherein the insulating case part andmatching part are configured to engage one another and be attached toone another when pressed together, the lead includes a contact portionthat is in contact with the electrode when the matching part is attachedto the insulating case part, a first portion connecting between thesignal terminal and the contact portion, and a spring portion betweenthe first portion and the contact portion.
 16. The power moduleaccording to claim 15, wherein the first portion includes a branchingportion, and the lead further includes a second contact portion and asecond spring portion on a separate branch of the branching portion fromthe contact portion and the spring portion.
 17. The power moduleaccording to claim 15, wherein the first portion of the lead includes aninsert molded portion within the matching part.
 18. A power module,comprising: a base substrate; a semiconductor circuit on the basesubstrate; an electrode for the semiconductor circuit on the basesubstrate; an insulating case part on the base substrate surrounding thesemiconductor circuit and the electrode in a plane parallel to a surfaceof the base substrate; and a cover part including a signal terminal onan outside of the cover part and a lead on the inside of the cover partthat is electrically connected to the signal terminal, wherein theinsulating case part and cover part are configured to engage one anotherand be attached to one another when pressed together, the lead includesa contact portion that is in contact with the electrode when the coverpart is attached to the insulating case part, a first portion connectingbetween the signal terminal and the contact portion, and a springportion between the first portion and the contact portion.
 19. The powermodule according to claim 18, wherein the cover part covers an upperopen end of the insulating case part when the matching part is attachedto the case part.
 20. The power module according to claim 19, wherein asidewall of the insulating case part includes a claw portion configuredto engage an end portion of the cover part.